The Chinese Research Team claims the world’s fastest non-volatile memory with 400PS writing speed but gives it a poxy name
Chinese scientists have developed super-fast non-volatile flash memory Graphene Channel enables 400 Picosekund Writing speed and sustained storage “POX” unit is targeted at AI -Bottle Half with low power, high -speed performance A research team in China has developed what claims are the fastest reported non-volatile semiconductor memory device to date, with a writing speed […]









